amplifiers - l ine a r & p ower - chip 1 HMC1029 v01.0412 gaas phemt mmic 2 watt power amplifier 29 - 37 ghz general description features functional diagram [3] the hm c1029 is a four stage gaas p hem t mmi c 2 w att p ower amplifer which operates between 29 and 37 g h z. the hm c1029 provides 24 db of gain, +35 dbm of saturated output power, and 25% p a e from a +6v power supply. the hm c1029 exhibits excellent linearity and is optimized for high capacity point-to-point and point-to-multi-point radio systems. the amplifer confguration and high gain make it an excellent candidate for last stage signal amplifcation before the antenna. all data is taken with the chip in a 50 o hm test fxture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. s aturated o utput p ower: +35 dbm @ 25% p a e h igh o utput ip 3: +42 dbm h igh gain: 24 db dc s upply: +6v @ 1400 ma n o e xternal m atching r equired die s ize: 2.79 x 2.37 x 0.1 mm electrical specifcations, t a = +25 c vdd = vdd1, vdd2, vdd3, vdd4, vdd5, vdd6, vdd7, vdd8 = +6v, idd = 1400 ma [1] typical applications the hm c1029 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat & satcom ? military & space p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 29 - 34 34 - 37 g hz gain 21 24 19.5 22.5 db gain variation o ver temperature 0.025 0.03 db/ c i nput r eturn l oss 20 18 db o utput r eturn l oss 14 20 db o utput p ower for 1 db compression ( p 1db) 27 31 27 30.5 dbm s aturated o utput p ower ( p sat) 35 34 dbm o utput third o rder i ntercept ( ip 3) [2] 42 40 dbm total s upply current ( i dd) 1400 1400 ma [1] adjust vgg between -2 to 0v to achieve i dd = 1400 ma typical. [2] m easurement taken at +6v @ 1400 ma, p out / tone = +24 dbm [3] vgg1 and vgg2 connected internally, amplifer can be biased by either vgg1 or vgg2 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 2 HMC1029 v01.0412 gaas phemt mmic 2 watt power amplifier 29 - 37 ghz input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature p1db vs. temperature p1db vs. supply voltage -30 -20 -10 0 10 20 30 25 27 29 31 33 35 37 39 s21 s11 s22 response (db) frequency (ghz) 16 18 20 22 24 26 28 30 28 30 32 34 36 38 +25 c +85 c -55 c gain (db) frequency (ghz) -40 -30 -20 -10 0 28 30 32 34 36 38 +25 c +85 c -55 c return loss (db) frequency (ghz) -40 -30 -20 -10 0 28 30 32 34 36 38 +25 c +85 c -55 c response (db) frequency (ghz) 24 26 28 30 32 34 28 30 32 34 36 38 +25c +85c -55c frequency (ghz) p1db (dbm) 24 26 28 30 32 34 28 30 32 34 36 38 5v 5.5v 6v frequency (ghz) p1db (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 3 HMC1029 v01.0412 gaas phemt mmic 2 watt power amplifier 29 - 37 ghz output ip3 vs. supply current, pout/tone = +24 dbm output ip3 vs. temperature, pout/tone = +24 dbm psat vs. supply current (idd) p1db vs. supply current (idd) psat vs. temperature psat vs. supply voltage 27 29 31 33 35 37 28 30 32 34 36 38 +25 c +85 c -55 c frequency (ghz) psat (dbm) 27 29 31 33 35 37 28 30 32 34 36 38 5v 5.5v 6v frequency (ghz) psat (dbm) 24 26 28 30 32 34 28 30 32 34 36 38 1200 ma 1400 ma frequency (ghz) p1db (dbm) 27 29 31 33 35 37 28 30 32 34 36 38 1200 ma 1400 ma frequency (ghz) psat (dbm) 26 31 36 41 46 28 30 32 34 36 38 +25 c +85 c -55 c frequency (ghz) ip3 (dbm) 26 31 36 41 46 28 30 32 34 36 38 1200 ma 1400 ma frequency (ghz) ip3 (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 4 HMC1029 v01.0412 gaas phemt mmic 2 watt power amplifier 29 - 37 ghz power compression @ 30 ghz output ip3 vs. supply voltage, pout/tone = +24 dbm output im3 @ vdd = +5.5v output im3 @ vdd = +6v output im3 @ vdd = +5v 26 31 36 41 46 28 29 30 31 32 33 34 35 36 37 38 5v 5.5v 6v frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 70 10 12 14 16 18 20 22 24 30 ghz 31 ghz 32 ghz 34 ghz 35 ghz 36 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 10 12 14 16 18 20 22 24 30 ghz 31 ghz 32 ghz 34 ghz 35 ghz 36 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 10 12 14 16 18 20 22 24 30 ghz 31 ghz 32 ghz 34 ghz 35 ghz 36 ghz pout/tone (dbm) im3 (dbc) power compression @ 33 ghz 0 5 10 15 20 25 30 35 40 -9 -6 -3 0 3 6 9 12 15 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) 0 5 10 15 20 25 30 35 40 -9 -6 -3 0 3 6 9 12 15 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 5 HMC1029 v01.0412 gaas phemt mmic 2 watt power amplifier 29 - 37 ghz power dissipation gain & power vs. supply voltage @ 33 ghz gain & power vs. supply current @ 33 ghz reverse isolation vs. temperature power compression @ 36 ghz 0 5 10 15 20 25 30 35 40 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -80 -70 -60 -50 -40 -30 -20 -10 0 28 30 32 34 36 38 +25c +85c -55c frequency (ghz) isolation (db) 15 20 25 30 35 40 1200 1250 1300 1350 1400 gain(db) p1db(dbm) psat(dbm) idd (ma) gain (db), p1db (dbm), psat (dbm) 15 20 25 30 35 40 5 5.2 5.5 5.7 6 gain (db) p1db (dbm) psat (dbm) vdd (v) gain (db), p1db (dbm), psat (dbm) 0 2 4 6 8 10 12 -7 -3 1 5 9 13 17 30 ghz 31 ghz 32 ghz 34 ghz 35 ghz 36 ghz power dissipation (w) input power (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 6 HMC1029 v01.0412 gaas phemt mmic 2 watt power amplifier 29 - 37 ghz absolute maximum ratings drain bias voltage (vdd) +7v rf i nput p ower ( rfin ) +20 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 135 m w /c above 85 c) 8.8 w thermal r esistance (channel to die bottom) 7. 3 9 c / w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) idd (ma) +5.0 1400 +6.0 1400 note: amplifer will operate over full voltage ranges shown above, vgg adjusted to achieve idd = 1400 ma at +6v typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions outline drawing no t es : 1. a ll d imensions a re in in c hes [ mm ] 2. d ie t hi ck ness is .004 3. ty pi ca l b on d p ad is .004 s qua re 4. back si d e me ta lli zat ion : g ol d 5. b on d p ad me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d. 7. c onne ct ion not re qu ire d for u nl ab ele d b on d p ad s . 8. ov er a ll d ie si z e .002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 7 HMC1029 v01.0412 gaas phemt mmic 2 watt power amplifier 29 - 37 ghz application circuit pin descriptions p ad n umber f unction description i nterface s chematic 1 rfin rf signal input. this pin is ac coupled and matched to 50 o hms over the operating frequency range. 2, 12 vgg1, vgg2 gate control for amplifer. amplifer can be biased by either vgg1 or vgg2. e xternal bypass capacitors of 100p f , 0.01u f , and 4.7u f are required. 3, 4, 5, 6 vdd1-4 drain bias voltage for the top half of the amplifer. e xternal bypass capacitors of 100p f required for each pin, followed by common 0.01u f and 4.7u f capacitors. 7 rfo ut rf signal output. this pad is ac coupled and matched to 50 o hms over the operating frequency range. 8, 9, 10, 11 vdd5-8 drain bias voltage for the bottom half of the amplifer. e xternal bypass capacitors of 100 p f required for each pin followed by common 0.01u f and 4.7u f capacitors. die bottom g nd die bottom must be connected to rf /dc ground. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 8 HMC1029 v01.0412 gaas phemt mmic 2 watt power amplifier 29 - 37 ghz assembly diagram for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 9 HMC1029 v01.0412 gaas phemt mmic 2 watt power amplifier 29 - 37 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against > 250v es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. w irebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 10 HMC1029 v01.0412 gaas phemt mmic 2 watt power amplifier 29 - 37 ghz notes: for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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